The growth of GaAs antiwires in the In0.53Ga0.47As matrix on InP substrate has been investigated. The periodic, wire-like structure was obtained when a proper amount of GaAs was deposited. The grown antiwires have a height about 1.2-2.0 nm and a period about 23 nm. Using an In 0.53Ga0.47As/In0.52Al0.48As modulation-doped structure, the effect of the GaAs antiwires on the two-dimensional electron gas mobility was investigated. For the sample with antiwires near the two-dimensional channel, a significant anisotropy in low temperature mobility was observed.