Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates

Sheng-Di Lin, C. P. Lee, W. H. Hsieh, Y. W. Suen

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Abstract

The growth of GaAs antiwires in the In0.53Ga0.47As matrix on InP substrate has been investigated. The periodic, wire-like structure was obtained when a proper amount of GaAs was deposited. The grown antiwires have a height about 1.2-2.0 nm and a period about 23 nm. Using an In 0.53Ga0.47As/In0.52Al0.48As modulation-doped structure, the effect of the GaAs antiwires on the two-dimensional electron gas mobility was investigated. For the sample with antiwires near the two-dimensional channel, a significant anisotropy in low temperature mobility was observed.

Original languageEnglish
Pages (from-to)3007-3009
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number16
DOIs
StatePublished - 14 Oct 2002

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