Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate

Sheng-Di Lin*, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We have grown GaAs antidots in InAs matrix on (100) InAs substrate successfully. The quantum-sized 3-D islands were observed clearly in both AFM and TEM measurements. From these observations, the 2-D to 3-D transition thickness is determined to be between 2.25 and 2.5 ML. For 2.5 ML GaAs deposition, the grown antidots have a size of about 15-35 nm in base diameter and about 2-4 nm in height with a density about 3-4 × 1010 cm-2.

Original languageEnglish
Pages (from-to)335-338
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume25
Issue number4
DOIs
StatePublished - 1 Jan 2005

Keywords

  • Antidots
  • GaAs/InAs
  • InAs substrate
  • Self-assembled growth
  • Transition thickness

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