We have grown GaAs antidots in InAs matrix on (100) InAs substrate successfully. The quantum-sized 3-D islands were observed clearly in both AFM and TEM measurements. From these observations, the 2-D to 3-D transition thickness is determined to be between 2.25 and 2.5 ML. For 2.5 ML GaAs deposition, the grown antidots have a size of about 15-35 nm in base diameter and about 2-4 nm in height with a density about 3-4 × 1010 cm-2.
|Number of pages||4|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|State||Published - 1 Jan 2005|
- InAs substrate
- Self-assembled growth
- Transition thickness