Self-aligned shallow trench isolation recess effect on cell performance and reliability of 42nm NAND flash memory

C. H. Liu, Y. M. Lin, Riichiro Shirota, H. C. Wei, L. T. Kuo, C. Han Liu, S. H. Chen, H. P. Hwang, Y. Sakamoto, S. Pittikoun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science