Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device with 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

Korok Chatterjee*, Sangwan Kim, Golnaz Karbasian, Ava J. Tan, Ajay K. Yadav, Asif I. Khan, Chen-Ming Hu, Sayeef Salahuddin

*Corresponding author for this work

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Chemical Compounds

Engineering & Materials Science