Abstract
We demonstrate a nonvolatile single transistor ferroelectric gate memory device with ultra-thin (5.5 nm) Hf0.8Zr0.2O2 (HZO) fabricated using a self-aligned gate last process. The FETs are fabricated using silicon-on-insulator wafers, and the ferroelectric is deposited with atomic layer deposition. The reported devices have an ON/OFF drain current ratio of up to 106, a read endurance of >10^{10} read cycles, and a program/erase endurance of 107 cycles. Furthermore, healing of the transistor after gate insulator breakdown is demonstrated.
Original language | English |
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Article number | 8025570 |
Pages (from-to) | 1379-1382 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 38 |
Issue number | 10 |
DOIs | |
State | Published - 1 Oct 2017 |
Keywords
- Ferroelectric
- gate last
- hafnium zirconium oxide
- memory
- silicon-on-insulator