Self-aligned fabrication of thin-film transistors with field-induced drain

C. M. Yu*, Horng-Chih Lin, C. Y. Lin, K. L. Yeh, T. Y. Huang, T. F. Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Thin-film transistor (TFT) devices with either a top or a bottom sub-gate were fabricated and characterized. The top sub-gate scheme allows the self-aligned formation of main-gate with respect to the sub-gate. On the other hand, the bottom sub-gate scheme features a self-aligned field-induced drain with a sidewall spacer located on its top to set the effective field-induction-drain (FID) length. Unlike the conventional TFTs, the FID serves to distribute the high drain electric field and thereby eliminates gate-induced drain leakage-like off-state leakage current. Superior device performance is realized with the bottom sub-gate structure.

Original languageEnglish
Pages (from-to)1091-1095
Number of pages5
JournalSolid-State Electronics
Volume46
Issue number8
DOIs
StatePublished - 1 Aug 2002

Keywords

  • Field-induced drain
  • Leakage
  • Thin-film transistor

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