Self-aligned bipolar npn transistor with 60 nm epitaxial base

Joachim N. Burghartz*, Siegfried R. Mader, Bernard S. Meyerson, Barry J. Ginsberg, Johannes M. Stork, Carol Stanis, Jack Y.C. Sun

*Corresponding author for this work

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

A self-aligned double-poly bipolar transistor with a low-temperature epitaxial base is presented. Selective epitaxy emitter window technology (SEEW) is used to demonstrate the leverage of an epitaxial base technology by achieving 60-nm basewidth, an 7.5-kΩ/sq. intrinsic base sheet resistance, a peak current gain up to 115, and a C-B breakdown voltage of 7.5 V. Despite the low intrinsic base sheet resistance, a peak transit frequency of 30 GHz has been calculated for the transistor. Further, the advantages of SEEW technology for submicron emitters and very thin base formation are explained.

Original languageEnglish
Pages (from-to)229-232
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1989
Event1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
Duration: 3 Dec 19896 Dec 1989

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    Burghartz, J. N., Mader, S. R., Meyerson, B. S., Ginsberg, B. J., Stork, J. M., Stanis, C., & Sun, J. Y. C. (1989). Self-aligned bipolar npn transistor with 60 nm epitaxial base. Technical Digest - International Electron Devices Meeting, 229-232.