Self-Aligned Bipolar Epitaxial Base n-p-n Transistors by Selective Epitaxy Emitter Window (SEEW) Technology

Joachim N. Burghartz, Siegfried R. Mader, Barry J. Ginsberg, Bernard S. Meyerson, Johannes M.C. Stork, Carol L. Stanis, Jack Yuan Chen Sun, Michael R. Polcari

Research output: Contribution to journalArticle

10 Scopus citations


A new bipolar technology is presented, which allows for very thin base formation by ultra-high vacuum/chemical vapor deposition (UHV/CVD) epitaxy and very narrow emitter width using selective epitaxial overgrowth. The key step in this selective epitaxy emitter window (SEEW) process is an in situ doped epitaxial lateral overgrowth over a thin and narrow nitride/oxide pad which forms an emitter window in the sublithographic range and provides an extrinsic base contact at the same time. Advantages over conventional double-poly self-aligned technology are 1) the very thin epitaxial base, 2) the formation of the extrinsic base after intrinsic epitaxial base deposition resulting in a guaranteed link-up, and 3) an emitter width in the deep submicrometer range by optical lithography, n-p-n bipolar transistors with 60-nm base width for 75 k intrinsic base resistance and emitter widths down to 0.2 um with 0.07-/um tolerance (a) have been fabricated using SEEW technology. Nearly ideal I-V characteristics have been achieved for these very narrow emitters. High-yield figures are demonstrated. The SEEW structure can provide very high current density at acceptable power level as it is desired to take full advantage of high-/ Si or SiGe epitaxial base technology.

Original languageEnglish
Pages (from-to)378-385
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number2
StatePublished - Feb 1991

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