Self-aligned AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistors for microwave applications

Mau-Chung Chang*, N. H. Sheng, P. M. Asbeck, G. J. Sullivan, K. C. Wang, R. J. Anderson, J. A. Higgins

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

The authors discuss the recent development of high-performance AlGaAs/InGaAs/GaAs collector-up HBTs (heterojunction bipolar transistors) fabricated by using a novel self-aligned base/collector process. Transistors with collector widths down to 2.6 μm and base doping up to 1 × 1020/cm3 have been fabricated and tested. Based on s-parameters measured up to 26 GHz, an extrapolated current gain bandwidth, ft, of 65 GHz and a maximum frequency of oscillation, fmax, of 102 GHz have been obtained. To the authors' knowledge, these are the first C-up HBTs demonstrated to operate at or above microwave frequencies.

Original languageEnglish
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume36
Issue number11 pt 1
DOIs
StatePublished - 1 Nov 1989
EventPhotovoltaic Module Reliability Workshop - Golden, CO, USA
Duration: 21 Jun 198921 Jun 1989

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