SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH IMPROVED HIGH-SPEED PERFORMANCE.

Mau-Chung Chang*, P. M. Asbeck, K. C. Wang, G. J. Sullivan, D. L. Miller, N. H. Sheng, J. A. Higgens

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The high-speed performance of heterojunction bipolar transistors fabricated by a self-aligned dual-liftoff method is discussed. Transistors with emitter width down to 1. 2 mu m and base doping up to 1 multiplied by 10**2**0/cm**3 have been fabricated. Extrapolated current gain cutoff frequency f//t 67 GHz and maximum frequency of oscillation f//m//a//x of 105 GHz have been obtained. Current-mode logic (CML) ring oscillators with propagation delays as low as 14. 2 ps have been demonstrated. Frequency dividers (1/4) have operated up to 20. 1 GHz.

Original languageEnglish
Pages (from-to)2369-2369
Number of pages1
JournalIEEE Transactions on Electron Devices
VolumeED-34
Issue number11
DOIs
StatePublished - 1 Nov 1987

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    Chang, M-C., Asbeck, P. M., Wang, K. C., Sullivan, G. J., Miller, D. L., Sheng, N. H., & Higgens, J. A. (1987). SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH IMPROVED HIGH-SPEED PERFORMANCE. IEEE Transactions on Electron Devices, ED-34(11), 2369-2369. https://doi.org/10.1109/T-ED.1987.23277