This paper describes the recent development of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) for microwave power applications. We report operation of self-aligned HBTs at both 10 and 18 GHz with record power-added efficiency as well as high gain and high power density. At 10 GHz, a 68% power added efficiency was obtained by using common-emitter (CE) HBTs with 11.6 dB gain and 5.7 W/mm power density. At 18 GHz, 47% power added efficiency was achieved by using common-base (CB) HBTs with 11.4 dB associated gain and 3.58 W/mm power density. The tested HBTs have a minimum feature size of 2 μm. Projection optical alignment was used for enhancing device yield and reproducibility.
|Number of pages||4|
|State||Published - 1 Dec 1990|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 22 Aug 1990 → 24 Aug 1990
|Conference||22nd International Conference on Solid State Devices and Materials|
|Period||22/08/90 → 24/08/90|