Self-aligned AlGaAs/GaAs heterojunction bipolar transistors for microwave power amplification

Mau-Chung Chang*, Nan Lei Wang, Peter M. Asbeck, Wu Jing Ho, Neng Haung Sheng, J. Aiden Higgins, Gerald J. Sullivan

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

This paper describes the recent development of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) for microwave power applications. We report operation of self-aligned HBTs at both 10 and 18 GHz with record power-added efficiency as well as high gain and high power density. At 10 GHz, a 68% power added efficiency was obtained by using common-emitter (CE) HBTs with 11.6 dB gain and 5.7 W/mm power density. At 18 GHz, 47% power added efficiency was achieved by using common-base (CB) HBTs with 11.4 dB associated gain and 3.58 W/mm power density. The tested HBTs have a minimum feature size of 2 μm. Projection optical alignment was used for enhancing device yield and reproducibility.

Original languageEnglish
Pages47-50
Number of pages4
StatePublished - 1 Dec 1990
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 22 Aug 199024 Aug 1990

Conference

Conference22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period22/08/9024/08/90

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