Selectivity of reactive ion etch of Ga 0.51 In 0.49 P/GaAs

I. W. Wu*, S. H. Chan, K. C. Lin, C. Y. Chang, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The Ga 0.51 In 0.49 P/GaAs system has better desired property (ΔE c >ΔE v ) than the conventional AlGaAs/GaAs system for heterojunction bipolar transistor (HBT) application. However, in the fabrication of HBTs, a precise control of the etch of the epilayer is very important. In this study, CH 4 /H 2 and BCl 3 /SF 6 were used for the reactive ion etch of the Ga 0.51 In 0.49 P/GaAs. It is found that the etch rate of Ga 0.51 In 0.49 P could be higher than that of GaAs with CH 4 /H 2 gas mixture under appropriate etching conditions. While in the case of BCl 3 /SF 6 , the etching rate of GaAs could be much higher than that of the Ga 0.51 In 0.49 P. By properly using CH 4 /H 2 and BCl 3 /SF 6 , the fabrication of Ga 0.51 In 0.49 P-based device using reactive ion etch could be easily achieved.

Original languageEnglish
Pages (from-to)755-760
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume337
DOIs
StatePublished - 1 Dec 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: 4 Apr 19948 Apr 1994

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