@inproceedings{c0d871c28f34453c9daacee5088c859d,
title = "Selectivity investigation of HfO2 to oxide using wet etching",
abstract = "Experiments indicate that higher HfO2/oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO2 cmd CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO2 and annealed CVD oxides will result in considerably high HfO2/CVD oxide etching selectivity in IPA/HF solution.",
author = "Kang, {Tsung Kuei} and Wang, {Chih Cheng} and Bing-Yue Tsui and Li, {Yuan Hsin}",
year = "2004",
month = dec,
day = "1",
doi = "10.1109/SMTW.2004.1393729",
language = "English",
isbn = "0780384695",
series = "2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW",
pages = "87--90",
booktitle = "2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW",
note = "null ; Conference date: 09-09-2004 Through 10-09-2004",
}