Selectivity investigation of HfO2 to oxide using wet etching

Tsung Kuei Kang*, Chih Cheng Wang, Bing-Yue Tsui, Yuan Hsin Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Experiments indicate that higher HfO2/oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO2 cmd CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO2 and annealed CVD oxides will result in considerably high HfO2/CVD oxide etching selectivity in IPA/HF solution.

Original languageEnglish
Title of host publication2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
Pages87-90
Number of pages4
DOIs
StatePublished - 1 Dec 2004
Event2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW - , Taiwan
Duration: 9 Sep 200410 Sep 2004

Publication series

Name2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW

Conference

Conference2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
CountryTaiwan
Period9/09/0410/09/04

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