Selectivity investigation of HfO2 to oxide using wet etching

Tsung Kuei Kang; Chih Cheng Wang; Bing-Yue Tsui; Yuan Hsin Li

doi:10.1109/SMTW.2004.1393729

Selectivity investigation of HfO₂ to oxide using wet etching

Tsung Kuei Kang^*, Chih Cheng Wang, Bing-Yue Tsui, Yuan Hsin Li

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Experiments indicate that higher HfO₂/oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO₂ cmd CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO₂ and annealed CVD oxides will result in considerably high HfO₂/CVD oxide etching selectivity in IPA/HF solution.

Original language	English
Title of host publication	2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
Pages	87-90
Number of pages	4
DOIs	https://doi.org/10.1109/SMTW.2004.1393729
State	Published - 1 Dec 2004
Event	2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW - , Taiwan Duration: 9 Sep 2004 → 10 Sep 2004

Publication series

Name	2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW

Conference

Conference	2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
Country	Taiwan
Period	9/09/04 → 10/09/04

Access to Document

10.1109/SMTW.2004.1393729

Fingerprint Dive into the research topics of 'Selectivity investigation of HfO<sub>2</sub> to oxide using wet etching'. Together they form a unique fingerprint.

Cite this

@inproceedings{c0d871c28f34453c9daacee5088c859d,

title = "Selectivity investigation of HfO2 to oxide using wet etching",

abstract = "Experiments indicate that higher HfO2/oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO2 cmd CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO2 and annealed CVD oxides will result in considerably high HfO2/CVD oxide etching selectivity in IPA/HF solution.",

author = "Kang, {Tsung Kuei} and Wang, {Chih Cheng} and Bing-Yue Tsui and Li, {Yuan Hsin}",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/SMTW.2004.1393729",

language = "English",

isbn = "0780384695",

series = "2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW",

pages = "87--90",

booktitle = "2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW",

note = "null ; Conference date: 09-09-2004 Through 10-09-2004",

}

Kang, TK, Wang, CC, Tsui, B-Y & Li, YH 2004, Selectivity investigation of HfO₂ to oxide using wet etching. in 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW. 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW, pp. 87-90, 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW, Taiwan, 9/09/04. https://doi.org/10.1109/SMTW.2004.1393729

Selectivity investigation of HfO₂ to oxide using wet etching. / Kang, Tsung Kuei; Wang, Chih Cheng; Tsui, Bing-Yue; Li, Yuan Hsin.

2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW. 2004. p. 87-90 (2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Selectivity investigation of HfO2 to oxide using wet etching

AU - Kang, Tsung Kuei

AU - Wang, Chih Cheng

AU - Tsui, Bing-Yue

AU - Li, Yuan Hsin

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Experiments indicate that higher HfO2/oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO2 cmd CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO2 and annealed CVD oxides will result in considerably high HfO2/CVD oxide etching selectivity in IPA/HF solution.

AB - Experiments indicate that higher HfO2/oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO2 cmd CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO2 and annealed CVD oxides will result in considerably high HfO2/CVD oxide etching selectivity in IPA/HF solution.

UR - http://www.scopus.com/inward/record.url?scp=17044398856&partnerID=8YFLogxK

U2 - 10.1109/SMTW.2004.1393729

DO - 10.1109/SMTW.2004.1393729

M3 - Conference contribution

AN - SCOPUS:17044398856

SN - 0780384695

T3 - 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW

SP - 87

EP - 90

BT - 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW

Y2 - 9 September 2004 through 10 September 2004

ER -