Selective growth of metal-rich silicide of near-noble metals

King-Ning Tu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

232 Scopus citations

Abstract

Near-noble metals react with Si to form a metal-rich silicide at 100 to 200°C. Growth of the silicide is selected by the criterion that diffusion of near-noble metal atoms to the silicide-silicon interface is needed in order to maintain a high interface mobility. Structure of the metal-rich silicide facilitates the diffusion. It has been postulated that high interface mobility can be achieved by transforming Si atoms at the interface from covalent bonding to metallic bonding and the transformation can be induced by forming metal interstitials in Si.

Original languageEnglish
Pages (from-to)221-224
Number of pages4
JournalApplied Physics Letters
Volume27
Issue number4
DOIs
StatePublished - 1 Dec 1975

Fingerprint Dive into the research topics of 'Selective growth of metal-rich silicide of near-noble metals'. Together they form a unique fingerprint.

Cite this