In this paper, we present experimental results on the selective growth of InAs self-organized quantum dots on patterned substrates using electron-beam lithography and molecular beam epitaxy. Higher dot densities were found on the patterned substrate with a particular pattern orientation compared to the densities of dots grown on the non-patterned area. Good quality of the quantum dot arrays and long-range ordering was also achieved. We have also studied the luminescence spectra of these quantum dots. Dots grown on patterned substrates do indeed show different luminescence characteristics compared to dots on non-patterned surfaces.