Selective epitaxial growth of GaInP by low-pressure metal-organic chemical-vapor deposition using ethyldimethylindium as in source

Shih Hsiung Chan*, Simon Ming Sze, Chun Yen Chang, Wei-I Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We have demonstrated the feasibility of selective epitaxial growth (SEG) of GaInP using low-pressure metal-organic chemical-vapor deposition (LPMOCVD) with the combination of ethyldimethylindium (EDMIn) and triethylgallium (TEGa) as the group-III sources. Complete selective epitaxy can be achieved at a growth temperature of 675°C and a growth pressure of 40 Torr. The deposition of Ga-rich polycrystalline GaInP on Si3N4 film occurs at lower temperatures. Although the incorporation efficiency of TEGa into GaInP is much lower than that of trimethylgallium, the combination of EDMIn and TEGa has been found to be a good candidate for SEG of GaInP. Low-temperature photoluminescence shows that the selectively grown epitaxial layer has good optical quality and is useful for light emitting device applications.

Original languageEnglish
Pages (from-to)2217-2219
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number17
DOIs
StatePublished - 1 Dec 1994

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