Selective Deposition of Multiple Sensing Materials on Si Nanobelt Devices through Plasma-Enhanced Chemical Vapor Deposition and Device-Localized Joule Heating

Ru Zheng Lin, Kuang Yang Cheng, Fu-Ming Pan, Jeng-Tzong Sheu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This paper describes a novel method, using device-localized Joule heating (JH) in a plasma enhanced atomic layer deposition (PEALD) system, for the selective deposition of platinum (Pt) and zinc oxide (ZnO) in the n- regions of n+/n-/n+ polysilicon nanobelts (SNBs). COMSOL simulations were adopted to estimate device temperature distribution. However, during ALD process, the resistance of SNB device decreased gradually and reached to minima after 20 min JH. As a result, thermal decomposition of precursors occurred during PEALD process. Selective deposition in the n- region was dominated by CVD instead of ALD. Selective deposition of Pt and ZnO films has been achieved and characterized using atomic force microscopy, scanning electron microscopy, and transmission electron microscopy.

Original languageEnglish
Pages (from-to)39935-39939
Number of pages5
JournalACS Applied Materials and Interfaces
Volume9
Issue number46
DOIs
StatePublished - 22 Nov 2017

Keywords

  • localized Joule heating
  • plasma-enhanced atomic layer deposition
  • plasma-enhanced chemical vapor deposition
  • selective deposition
  • silicon nanobelt

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