Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices

M. F. Li*, H. Y. Yu, Y. T. Hou, J. F. Kang, X. P. Wang, C. Shen, C. Ren, Y. C. Yeo, C. X. Zhu, D. S.H. Chan, Albert Chin, D. L. Kwong

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

Based on our recent investigation on HfO 2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO 2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift.

Original languageEnglish
Pages366-371
Number of pages6
StatePublished - 1 Dec 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 18 Oct 200421 Oct 2004

Conference

Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period18/10/0421/10/04

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