Nanometric oxide patterns were fabricated on H-passivated Si using scanning tunneling microscopy in air with W and PtIr tips. The material makeup of the tip, as well as its geometry, was found an important factor that affects the optimum bias voltage for STM patterning. Under optimum bias conditions, clean and uniform patterns could be obtained without wearing out the tip and the patterns formed have the lowest apparent depth. The sharpness of the tip affects the width and height of the oxide lines.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 Mar 2000|