Search of optimum bias voltage for oxide patterning on Si using scanning tunneling microscopy in air

Kuen Syh Tseng, Tsung-Eong Hsien, Shih Che Lo, Hsi Fu Lin

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Nanometric oxide patterns were fabricated on H-passivated Si using scanning tunneling microscopy in air with W and PtIr tips. The material makeup of the tip, as well as its geometry, was found an important factor that affects the optimum bias voltage for STM patterning. Under optimum bias conditions, clean and uniform patterns could be obtained without wearing out the tip and the patterns formed have the lowest apparent depth. The sharpness of the tip affects the width and height of the oxide lines.

Original languageEnglish
Pages (from-to)639-643
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number2
DOIs
StatePublished - 1 Mar 2000

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