Turn-on efficiency is the main concern for silicon-controlled rectifier (SCR) devices used as on-chip electrostatic discharge (ESD) protection circuit, especially in deep sub-quarter-micron CMOS processes with much thinner gate oxide. A novel double-triggered technique is proposed to speed up the turn-on speed of SCR devices for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide in sub-quarter-micron CMOS processes. From the experimental results, the switching voltage and turn-on time of such double-triggered SCR (DT_SCR) device has been confirmed to be significantly reduced by this double-triggered technique.
|Number of pages||11|
|Journal||IEEE Transactions on Device and Materials Reliability|
|State||Published - 1 Sep 2003|
- Double-triggered technique
- Electrostatic discharge (ESD)
- ESD protection circuit
- Silicon-controlled rectifier (SCR)