Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension

Horng-Chih Lin*, K. L. Yeh, R. G. Huang, C. Y. Lin, T. Y. Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

A novel Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain (FID) extension is proposed and demonstrated. In the new device configuration, a metal field-plate (or sub-gate) lying on the passivation oxide is employed to induce a sheet of carriers in a channel offset region located between the silicided drain and the active channel region underneath the main-gate. The new device thus allows ambipolar device operation by simply switching the polarity of the bias applied to the field plate. In contrast to the conventional SBTFT that suffers from high GIDL (gate-induced drain leakage)-like off-state leakage current, the new SBTFT with FID is essentially free from the GIDL-like leakage current. In addition, unlike the conventional SBTFT that suffers from the low on-off current ratio, the new device exhibits high on/off current ratio up to 10 6 for both n- and p-channel modes of operation. Moreover, the implantless feature and the ambipolar capability of the new device also result in extra low mask count for CMOS processes integration. These excellent device characteristics, coupled with its simple processing, make the new device very promising for future large-area electronic applications.

Original languageEnglish
Pages (from-to)179-181
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number4
DOIs
StatePublished - 1 Apr 2001

Keywords

  • Ambipolar
  • Field-induced drain
  • Schottky barrier
  • Thin-film transistor

Fingerprint Dive into the research topics of 'Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension'. Together they form a unique fingerprint.

  • Cite this