This letter presents a low-temperature process to fabricate Schottky-barrier silicide source/drain transistors (SSDTs) with high-κ gate dielectric and metal gate. For p-channel SSDTs (P-SSDT) using PtSi sourece/drain (S/D), excellent electrical performance of Ion/Ioff ∼ 107 - 108 and subthreshold slope of 66 mV/dec have been achieved. For n-channel SSDTs (N-SSDTs) using DySi2-x S/D, Ion/Ioff can reach ∼ 105 at Vds of 0.2 V with two subthreshold slopes of 80 and 340 mV/dec. The low-temperature process relaxes the thermal budget of high-κ dielectric and metal-gate materials to be used in the future generation CMOS technology.
- Metal gate