Schottky barrier of nonuniform contacts to n-type and p-type silicon

R. D. Thompson; King-Ning Tu

doi:10.1063/1.331257

Schottky barrier of nonuniform contacts to n-type and p-type silicon

R. D. Thompson^*, King-Ning Tu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.

Original language	English
Pages (from-to)	4285-4288
Number of pages	4
Journal	Journal of Applied Physics
Volume	53
Issue number	6
DOIs	https://doi.org/10.1063/1.331257
State	Published - 1 Dec 1982

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title = "Schottky barrier of nonuniform contacts to n-type and p-type silicon",

abstract = "A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.",

author = "Thompson, {R. D.} and King-Ning Tu",

year = "1982",

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AU - Tu, King-Ning

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N2 - A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.

AB - A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.

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