Schottky barrier of nonuniform contacts to n-type and p-type silicon

R. D. Thompson*, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.

Original languageEnglish
Pages (from-to)4285-4288
Number of pages4
JournalJournal of Applied Physics
Volume53
Issue number6
DOIs
StatePublished - 1 Dec 1982

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