We investigated the modulation of Schottky barrier height (Φb) of Ni silicide by inserting an Er layer between Si (100) substrate and Ni layer before silicidation annealing. Φb for electrons of NiSi was found to be decreased by using this technique. The n-channel SB-MOSFETs with source/drain contacts formed by this technique were fabricated and effects of the barrier lowering was observed on the transistor characteristics.
|Title of host publication||ECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008|
|Number of pages||6|
|State||Published - 2009|
|Event||Solid State - General - 214th ECS Meeting/RRiME 2008 - Honolulu, HI, United States|
Duration: 12 Oct 2008 → 17 Oct 2008
|Conference||Solid State - General - 214th ECS Meeting/RRiME 2008|
|Period||12/10/08 → 17/10/08|