Scanning tunneling spectroscopy studies of topological materials

Chun-Liang Lin*, Naoya Kawakami, Ryuichi Arafune, Emi Minamitani, Noriaki Takagi

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

3 Scopus citations

Abstract

Topological materials have become promising materials for next-generation devices by utilizing their exotic electronic states. Their exotic states caused by spin-orbital coupling usually locate on the surfaces or at the edges. Scanning tunneling spectroscopy (STS) is a powerful tool to reveal the local electronic structures of condensed matters. Therefore, STS provides us with an almost perfect method to access the exotic states of topological materials. In this topical review, we report the current investigations by several methods based on the STS technique for layered topological material from transition metal dichalcogenide Weyl semimetals (WTe2 and MoTe2) to two dimensional topological insulators (layered bismuth and silicene). The electronic characteristics of these layered topological materials are experimentally identified.

Original languageEnglish
Article number243001
Number of pages24
JournalJournal of Physics Condensed Matter
Volume32
Issue number24
DOIs
StatePublished - 3 Jun 2020

Keywords

  • topological materials
  • scanning tunneling spectroscopy
  • transition metal dichalcogenide
  • topological insulators
  • bismuth
  • silicene
  • quasiparticle interference
  • EPITAXIAL-GROWTH
  • TUNGSTEN DITELLURIDE
  • LANDAU-LEVELS
  • FERMI ARCS
  • SEMIMETAL
  • SILICENE
  • BISMUTH
  • SURFACE
  • ELECTRON
  • STATES

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