The direct tunneling gate currents through Si3N4 in both N- and P-MOSFETs were examined using an analytical model. Excellent agreement was observed between model and experimental data.
|Number of pages||2|
|State||Published - 1 Jan 2000|
|Event||58th Device Research Conference (58th DRC) - Denver, CO, USA|
Duration: 19 Jun 2000 → 21 Jun 2000
|Conference||58th Device Research Conference (58th DRC)|
|City||Denver, CO, USA|
|Period||19/06/00 → 21/06/00|