SBD layout optimization with effect of N-well to p-substrate pn junctions in 0.18 μm CMOS process

Wei Ling Chang, Chinchun Meng, Guo Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of layout on silicon SBD in CMOS process is studied in this paper. The size of anode area not only affects the series resistance and SBD junction capacitance but also causes serious parasitic effect from cathode to the p-substrate. Typically, an SBD of a small unit anode has a better cut-off frequency than that of a large unit anode. The cutoff frequency of a small anode Schottky diode is about 700 GHz in a standard 0.18 μm CMOS process. However, a SBD with a small unit anode is prone to the effect of p-substrate to N-well pn junction capacitor. This paper has characterized SBDs of different anode sizes with bottom and side-wall effect of p-substrate to N-well to select an optimal unit-anode area by reducing the substrate effect and providing sufficient fT for high frequency applications.

Original languageEnglish
Title of host publication2016 Asia-Pacific Microwave Conference, APMC 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509015924
DOIs
StatePublished - 17 May 2017
Event2016 Asia-Pacific Microwave Conference, APMC 2016 - Aerocity, New Delhi, India
Duration: 5 Dec 20169 Dec 2016

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume0

Conference

Conference2016 Asia-Pacific Microwave Conference, APMC 2016
CountryIndia
CityAerocity, New Delhi
Period5/12/169/12/16

Keywords

  • CMOS
  • Cutoff frequency
  • Millimeter-wave
  • N-well
  • Pn junction
  • Schottky barrier diode

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    Chang, W. L., Meng, C., & Huang, G. W. (2017). SBD layout optimization with effect of N-well to p-substrate pn junctions in 0.18 μm CMOS process. In 2016 Asia-Pacific Microwave Conference, APMC 2016 - Proceedings [7931323] (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 0). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC.2016.7931323