Saturation velocity and velocity overshoot of inversion layer electrons and holes

Fariborz Assaderaghi*, Dennis Sinitsky, Henry Gaw, Jeffrey Bokor, Ping K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

14 Scopus citations

Abstract

In this paper we address the effect of a wide range of parameters on the high-field transport of inversion layer electrons and holes. The studied parameters include substrate doping level, surface micro-roughness, nitridation of the gate oxide, and device channel length. Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocity on nitridation of the gate oxide, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness.

Original languageEnglish
Pages (from-to)479-482
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1994
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 11 Dec 199414 Dec 1994

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