In this paper we address the effect of a wide range of parameters on the high-field transport of inversion layer electrons and holes. The studied parameters include substrate doping level, surface micro-roughness, nitridation of the gate oxide, and device channel length. Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocity on nitridation of the gate oxide, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1994|
|Event||Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 11 Dec 1994 → 14 Dec 1994