Saturation of the free carrier absorption in ZnTe Crystals

S. A. Ku, C. M. Tu, W. C. Chu, Chih-Wei Luo*, Kaung-Hsiung Wu, A. Yabushita, C. C. Chi, T. Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

This study systematically investigates the influence of free carriers on the generation of THz in ZnTe crystals, over a wide range of pumping fluences. As the pumping fluence is increased (< 6.36 mJ/cm2), the concentration of free carriers gradually increases and the THz output power is saturated, as clearly demonstrated by the time delay in the THz temporal waveforms, the changes in the THz spectral weight and the redshift in the PL spectra. For high pumping fluences (> 6.36 mJ/cm2), spectacularly, there is a significant quadratic increase in the THz output power when the pumping fluence is increased, as well as at low pumping fluences of < 0.58 mJ/cm2, because of the saturation of free carriers.

Original languageEnglish
Pages (from-to)13930-13937
Number of pages8
JournalOptics Express
Volume21
Issue number12
DOIs
StatePublished - 17 Jun 2013

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