"S-shaped" photoluminescence emission shift in Cu(In,Ga)Se 2 thin films

Y. K. Liao*, S. Y. Kuo, F. I. Lai, W. T. Lin, D. H. Hsieh, D. W. Chiu, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.

Original languageEnglish
Article numberAF4B.32
JournalAsia Communications and Photonics Conference, ACP
DOIs
StatePublished - 1 Jan 2012
Event2012 Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, China
Duration: 7 Nov 201210 Nov 2012

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