We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.
|Journal||Asia Communications and Photonics Conference, ACP|
|State||Published - 1 Jan 2012|
|Event||2012 Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, China|
Duration: 7 Nov 2012 → 10 Nov 2012