RTN modulation by neighboring word-line Vt level in 1Xnm floating gate NAND strings

C. C. Cheng*, Y. H. Chen, C. P. Wang, C. H. Cheng, C. W. Lee, T. W. Lin, S. H. Ku, Y. W. Chang, W. J. Tsai, T. C. Lu, K. C. Chen, Ta-Hui Wang, Chih Yuan Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Impact of threshold voltage (Vt) level from the cells at neighboring word-lines (WLs) on random telegraph noise (RTN) in floating-gate (FG) NAND flash memory is investigated. Due to aggressive pitch scaling, two-step programming is utilized to suppress the cell-to-cell interference and to achieve multi-level-cell (MLC) operation [1,2]. Such scheme could compromise the interference to get optimized Vt distributions at selected WL (sel-WL) even if the cells at the adjacent WLs reveal various Vt states. Once the neighboring WL keeps at low-Vt state, a compact RTN distribution is obtained. TCAD device simulation putting different stored charges to modulate the adjacent equivalent pass gate voltage (equi-Vpass), further confirms that RTN variation strongly correlates to the conduction current path beneath the sel-WLs. The reduction of RTN influence by increasing the equi-Vpass is then demonstrated. Finally, the optimal source/drain dosage range would be determined.

Original languageEnglish
Title of host publication2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538648254
DOIs
StatePublished - 3 Jul 2018
Event2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan
Duration: 16 Apr 201819 Apr 2018

Publication series

Name2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Conference

Conference2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
CountryTaiwan
CityHsinchu
Period16/04/1819/04/18

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