RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

Wun Cheng Luo*, Jen Chieh Liu, Hsien Tsung Feng, Yen Chuan Lin, Jiun Jia Huang, Kuan Liang Lin, Tuo-Hung Hou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Scopus citations

Abstract

This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.

Original languageEnglish
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages9.5.1-9.5.4
Number of pages4
DOIs
StatePublished - 10 Dec 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: 10 Dec 201213 Dec 2012

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period10/12/1213/12/12

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