Room-temperature violet luminescence and ultraviolet photodetection of Sb-doped ZnO/Al-doped ZnO homojunction array

Wei Jen Chen, Jen Kai Wu, Jheng Cyuan Lin, Shun-Tsung Lo, Huang De Lin, Da Ren Hang*, Ming Feng Shih, Chi Te Liang, Yuan Huei Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

A Sb-doped ZnO microrod array was fabricated on an Al-doped ZnO thin film by electrodeposition. Strong violet luminescence, originated from free electron-to-acceptor level transitions, was identified by temperature-dependent photoluminescence measurements. This acceptor-related transition was attributed to substitution of Sb dopants for Zn sites, instead of O sites, to form a complex with two Zn vacancies (VZn), the SbZn-2VZn complex. This SbZn-2VZn complex has a lower formation energy and acts as a shallow acceptor which can induce the observed strong violet luminescence. The photoresponsivity of our ZnO p-n homojunction device under a negative bias demonstrated a nearly 40-fold current gain, illustrating that our device is potentially an excellent candidate for photodetector applications in the ultraviolet wavelength region.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 13 Aug 2013

Keywords

  • P-type ZnO
  • Photoluminescence
  • Violet luminescence

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