Room Temperature Optically Pumped 2.56-mu m Lasers With "W" Type InGaAs/GaAsSb Quantum Wells on InP Substrates

Chien-Hung Pan, Chia-Hao Chang, Chien-Ping Lee

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13 Scopus citations

Abstract

The optically pumped laser using InGaAs/GaAsSb W-type quantum wells is demonstrated with a threshold power density similar to 40 kW/cm(2). The L-L curve and the dramatic line width shrinkage above threshold confirm, for the first time, mid-infrared lasing in this structure on InP substrates. The lasing wavelength at 2.56 mu m is the longest lasing wavelength at room temperature for the interband transition of InP-based material system.
Original languageEnglish
Pages (from-to)1145-1147
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number13
DOIs
StatePublished - 1 Jul 2012

Keywords

  • InP-based; midinfrared lasers; optically pumped; type-II "W" type quantum wells

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