Room temperature observation of velocity overshoot in silicon inversion layers

Fariborz Assaderaghi*, Ping Keung Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

For the first time, direct observation of velocity overshoot using a special test structure is reported. Seen at channel length of 0.22 micrometer, is the first indication of velocity overshoot.

Original languageEnglish
Pages116-117
Number of pages2
StatePublished - 1 Dec 1993
EventProceedings of the IEEE International SOI Conference - Palm Springs, CA, USA
Duration: 5 Oct 19937 Oct 1993

Conference

ConferenceProceedings of the IEEE International SOI Conference
CityPalm Springs, CA, USA
Period5/10/937/10/93

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