Room-temperature observation of large coulomb-blockade oscillations from germanium quantum-dot single-hole transistors with self-aligned electrodes

Gwong Liang Chen, Wei Ting Lai, David M.T. Kuo, Pei-Wen Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A single Ge quantum-dot (-10 nm) forms and self-aligns with source/drain electrodes via SiO2 tunneling barriers using thermal oxidation of a SiGe-on-insulator nanowire. Thereby, a Ge single-hole transistor with self-aligned electrodes is experimentally realized based on FinFET technology and features with clear Coulomb staircase/negative differential conductance and large Coulomb-blockade oscillation behaviors at room temperature. This work provides a simple approach to alleviate this nanofabrication bottleneck and thereby reduce series resistances and increase design freedom for SETs

Original languageEnglish
Title of host publication2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages1313-1316
Number of pages4
DOIs
StatePublished - 1 Dec 2007
Event2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China
Duration: 2 Aug 20075 Aug 2007

Publication series

Name2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Conference

Conference2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
CountryChina
CityHong Kong
Period2/08/075/08/07

Keywords

  • Coulomb blockade
  • Germanium
  • Quantum dot
  • Self-aligned electrodes
  • Single electron transistor

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