Room temperature negative differential capacitance in self-assembled quantum dots

V. V. Ilchenko; V. V. Marin; Sheng-Di Lin; K. Y. Panarin; A. A. Buyanin; O. V. Tretyak

doi:10.1088/0022-3727/41/23/235107

Room temperature negative differential capacitance in self-assembled quantum dots

V. V. Ilchenko, V. V. Marin, Sheng-Di Lin, K. Y. Panarin, A. A. Buyanin, O. V. Tretyak

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The negative differential capacitance (NDC) of Schottky diodes with layers of InAs quantum dots (QDs) has been clearly observed at room temperature. The frequency dependence of the NDC is investigated. The measured peak capacitances of NDC decay rapidly at the testing frequencies higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.

Original language	English
Article number	235107
Journal	Journal of Physics D: Applied Physics
Volume	41
Issue number	23
DOIs	https://doi.org/10.1088/0022-3727/41/23/235107
State	Published - 1 Dec 2008

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abstract = "The negative differential capacitance (NDC) of Schottky diodes with layers of InAs quantum dots (QDs) has been clearly observed at room temperature. The frequency dependence of the NDC is investigated. The measured peak capacitances of NDC decay rapidly at the testing frequencies higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.",

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AU - Marin, V. V.

AU - Lin, Sheng-Di

AU - Panarin, K. Y.

AU - Buyanin, A. A.

AU - Tretyak, O. V.

PY - 2008/12/1

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N2 - The negative differential capacitance (NDC) of Schottky diodes with layers of InAs quantum dots (QDs) has been clearly observed at room temperature. The frequency dependence of the NDC is investigated. The measured peak capacitances of NDC decay rapidly at the testing frequencies higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.

AB - The negative differential capacitance (NDC) of Schottky diodes with layers of InAs quantum dots (QDs) has been clearly observed at room temperature. The frequency dependence of the NDC is investigated. The measured peak capacitances of NDC decay rapidly at the testing frequencies higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.

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Room temperature negative differential capacitance in self-assembled quantum dots

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