Room temperature negative differential capacitance in self-assembled quantum dots

V. V. Ilchenko, V. V. Marin, Sheng-Di Lin, K. Y. Panarin, A. A. Buyanin, O. V. Tretyak

Research output: Contribution to journalArticle

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Abstract

The negative differential capacitance (NDC) of Schottky diodes with layers of InAs quantum dots (QDs) has been clearly observed at room temperature. The frequency dependence of the NDC is investigated. The measured peak capacitances of NDC decay rapidly at the testing frequencies higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.

Original languageEnglish
Article number235107
JournalJournal of Physics D: Applied Physics
Volume41
Issue number23
DOIs
StatePublished - 1 Dec 2008

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