Room-temperature mid-infrared "m"-type GaAsSb/InGaAs quantum well lasers on InP substrate

Chia Hao Chang, Zong Lin Li, Chien Hung Pan, Hong Ting Lu, Chien-Ping Lee, Sheng-Di Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234W/cm2 and 20.5cm-1, respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of "M"-type QW laser was superior to the inverse "W"-type one due to its thinner barrier for holes. Further improvement of the "M"-type QW structure could lead to a cost-effective mid-infrared light source.

Original languageEnglish
Article number063104
JournalJournal of Applied Physics
Issue number6
StatePublished - 1 Jan 2014

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