Room-temperature flexible thin film transistor with high mobility

Hsiao-Hsuan Hsu; Chun-Yen Chang; Chun-Hu Cheng

doi:10.1016/j.cap.2013.04.026

Room-temperature flexible thin film transistor with high mobility

Hsiao-Hsuan Hsu, Chun-Yen Chang, Chun-Hu Cheng

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm(2)/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation. (C) 2013 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1459-1462
Number of pages	4
Journal	Current Applied Physics
Volume	13
Issue number	7
DOIs	https://doi.org/10.1016/j.cap.2013.04.026
State	Published - Sep 2013

Keywords

InGaZnO (IGZO); Thin film transistor (TFT); Y2O3; TiO2
DIELECTRICS

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title = "Room-temperature flexible thin film transistor with high mobility",

abstract = "We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm(2)/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation. (C) 2013 Elsevier B.V. All rights reserved.",

keywords = "InGaZnO (IGZO); Thin film transistor (TFT); Y2O3; TiO2, DIELECTRICS",

author = "Hsiao-Hsuan Hsu and Chun-Yen Chang and Chun-Hu Cheng",

year = "2013",

month = sep,

doi = "10.1016/j.cap.2013.04.026",

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journal = "Current Applied Physics",

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T1 - Room-temperature flexible thin film transistor with high mobility

AU - Hsu, Hsiao-Hsuan

AU - Chang, Chun-Yen

AU - Cheng, Chun-Hu

PY - 2013/9

Y1 - 2013/9

N2 - We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm(2)/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation. (C) 2013 Elsevier B.V. All rights reserved.

AB - We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm(2)/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation. (C) 2013 Elsevier B.V. All rights reserved.

KW - InGaZnO (IGZO); Thin film transistor (TFT); Y2O3; TiO2

KW - DIELECTRICS

U2 - 10.1016/j.cap.2013.04.026

DO - 10.1016/j.cap.2013.04.026

M3 - Article

VL - 13

SP - 1459

EP - 1462

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 7

ER -