Abstract
A discussion on the room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes was presented. It was reported that different passivation processes were employed. The results showed that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to room-temperature.
Original language | English |
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Pages (from-to) | 2958-2960 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 14 |
DOIs | |
State | Published - 6 Oct 2003 |