Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Wen-Hao Chang*, A. T. Chou, W. Y. Chen, H. S. Chang, T. M. Hsu, Z. Pei, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, M. J. Tsai

*Corresponding author for this work

Research output: Contribution to journalArticle

63 Scopus citations

Abstract

A discussion on the room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes was presented. It was reported that different passivation processes were employed. The results showed that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to room-temperature.

Original languageEnglish
Pages (from-to)2958-2960
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number14
DOIs
StatePublished - 6 Oct 2003

Fingerprint Dive into the research topics of 'Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots'. Together they form a unique fingerprint.

  • Cite this

    Chang, W-H., Chou, A. T., Chen, W. Y., Chang, H. S., Hsu, T. M., Pei, Z., Chen, P. S., Lee, S. W., Lai, L. S., Lu, S. C., & Tsai, M. J. (2003). Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots. Applied Physics Letters, 83(14), 2958-2960. https://doi.org/10.1063/1.1616665