Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Wen-Hao Chang; A. T. Chou; W. Y. Chen; H. S. Chang; T. M. Hsu; Z. Pei; P. S. Chen; S. W. Lee; L. S. Lai; S. C. Lu; M. J. Tsai

doi:10.1063/1.1616665

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Wen-Hao Chang^*, A. T. Chou, W. Y. Chen, H. S. Chang, T. M. Hsu, Z. Pei, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, M. J. Tsai

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

A discussion on the room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes was presented. It was reported that different passivation processes were employed. The results showed that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to room-temperature.

Original language	English
Pages (from-to)	2958-2960
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	14
DOIs	https://doi.org/10.1063/1.1616665
State	Published - 6 Oct 2003

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title = "Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots",

abstract = "A discussion on the room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes was presented. It was reported that different passivation processes were employed. The results showed that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to room-temperature.",

author = "Wen-Hao Chang and Chou, {A. T.} and Chen, {W. Y.} and Chang, {H. S.} and Hsu, {T. M.} and Z. Pei and Chen, {P. S.} and Lee, {S. W.} and Lai, {L. S.} and Lu, {S. C.} and Tsai, {M. J.}",

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Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots. / Chang, Wen-Hao; Chou, A. T.; Chen, W. Y.; Chang, H. S.; Hsu, T. M.; Pei, Z.; Chen, P. S.; Lee, S. W.; Lai, L. S.; Lu, S. C.; Tsai, M. J.

In: Applied Physics Letters, Vol. 83, No. 14, 06.10.2003, p. 2958-2960.

Research output: Contribution to journal › Article › peer-review

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T1 - Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

AU - Chang, Wen-Hao

AU - Chou, A. T.

AU - Chen, W. Y.

AU - Chang, H. S.

AU - Hsu, T. M.

AU - Pei, Z.

AU - Chen, P. S.

AU - Lee, S. W.

AU - Lai, L. S.

AU - Lu, S. C.

AU - Tsai, M. J.

PY - 2003/10/6

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AB - A discussion on the room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes was presented. It was reported that different passivation processes were employed. The results showed that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to room-temperature.

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