Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode

Wen-Hao Chang, An Tai Chou, Wen Yen Chen, Hsiang Szu Chang, Tzu Min Hsu, Zingway Pei, Pan Shiu Chen, S. W. Lee, Li Shyue Lai, S. C. Lu, M. J. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report RT EL from Ge/Si QD light-emitting diodes (LED). The LEDs were fabricated in mesa-type structure, with silicon oxide layer on the top for surface/side wall passivation. Different passivation processes have been employed. We found that the EL intensities are relatively less sensitive to temperature in the range of 80 to 300 K. At RT, an internal quantum efficiency up to 0.015 % has been achieved.

Original languageEnglish
Title of host publication2003 International Symposium on Compound Semiconductors, ISCS 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages129-130
Number of pages2
ISBN (Electronic)0780378202
DOIs
StatePublished - 1 Jan 2003
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 25 Aug 200327 Aug 2003

Publication series

NameIEEE International Symposium on Compound Semiconductors, Proceedings
Volume2003-January

Conference

Conference2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period25/08/0327/08/03

Keywords

  • Current density
  • Displays
  • Electroluminescence
  • Industrial electronics
  • Light emitting diodes
  • Oxidation
  • Passivation
  • Physics
  • Quantum dots
  • Radiative recombination

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