Room temperature 1.3 and 1.5 μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers

Z. Pei*, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, M. J. Tsai, Wen-Hao Chang, W. Y. Chen, A. T. Chou, T. M. Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Electroluminescence devices that use Si/Ge multilayer quantum dots as emission material emitting at 1.3 and 1.5μm are reported in this paper. The Si/Ge quantum dots were made by commercial ultra-high vacuum chemical vapor deposition techniques at 600°C. The photoluminescence spectrum shows a 1.55μm emission peak at room temperature. Low and high temperature (710°C) oxides are used as passivation layers for the mesa surface. The high temperature oxidized samples exhibit low device leakage currents and a 2×10 -7 external quantum efficiency at room temperature. However, the high temperature process causes Si and Ge to inter-diffuse and makes the emission shift to 1.3μm. The low temperature oxidation results in large device leakage current and lower emission intensity but leaves the emission peak at 1.5μm.

Original languageEnglish
Pages (from-to)165-169
Number of pages5
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
StatePublished - 15 Mar 2004

Keywords

  • Electroluminescence
  • Quantum dots

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