Role of the piezoelectric effect in device uniformity of GaAs integrated circuits

Mau-Chung Chang*, C. P. Lee, P. M. Asbeck, R. P. Vahrenkamp, C. G. Kirkpatrick

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

In order to assess the orientation dependence of device uniformity in GaAs integrated circuits, metal-semiconductor field-effect transistors (MESFET's) were fabricated along different crystal orientations on a 3-in. (100) substrate and compared with one another. Measurements indicated that the characteristics of FET's oriented along [011] and [011̄] directions have strong dependence upon their radial positions on the wafer. However, FET's oriented in [001] and [010] directions do not display such dependence and have better device uniformity. The orientation effect on the radial dependence of the FET device characteristics can be attributed to the piezoelectric effect.

Original languageEnglish
Pages (from-to)279-281
Number of pages3
JournalApplied Physics Letters
Volume45
Issue number3
DOIs
StatePublished - 1 Dec 1984

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