Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films

Yingbang Yao, S. G. Lu, Haydn Chen*, Jiwei Zhai, K. H. Wong

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The role of oxygen pressure during the pulsed laser deposition of lead zirconate stannate titanates (PLZST) thin films was discussed. It was found that the oxygen pressure was in the range of 100-125 mTorr. The roughness of the films increases with increasing oxygen pressure. During deposition, fatigue and leakage current were also found to decrease with the oxygen pressure. The results show that for the samples deposited under higher oxygen pressure, there exist low-frequency dielectric dispersion process.

Original languageEnglish
Pages (from-to)569-574
Number of pages6
JournalJournal of Applied Physics
Volume96
Issue number1
DOIs
StatePublished - 1 Jul 2004

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