Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

Li Wei Feng, Chun-Yen Chang, Chun Hao Tu, Pai-Syuan Wang, Yao Feng Chang, Chen Min Chen, Hui Chun Huang

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19 Scopus citations

Abstract

We investigated the physical and electrical characteristics of Ti-based nanocrystals (NCs) with composition of germanium fabricated by cosputtering titanium silicide and germanium targets for low temperature applications of nonvolatile memory. The addition of Ge significantly reduces the thermal budget necessary for Ti-based NCs formation to 500 degrees C in 2 min due to the rise of its morphological instability and agglomeration properties. Compositions characteristics were analyzed by x-ray photon-emission spectroscopy and formations of NCs were observed by transmission electron microscopy. Additionally, capacitance-voltage characteristics, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.
Original languageEnglish
Article number262110
JournalApplied Physics Letters
DOIs
StatePublished - 28 Dec 2009

Keywords

  • elemental semiconductors; germanium; materials preparation; nanostructured materials; random-access storage; sputter deposition; titanium compounds; transmission electron microscopy; X-ray photoelectron spectra
  • LAYER-DEPOSITION SYSTEM; CHARGE STORAGE; STABILITY; DIOXIDE; GE

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