Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

Li Wei Feng; Chun-Yen Chang; Chun Hao Tu; Pai-Syuan Wang; Yao Feng Chang; Chen Min Chen; Hui Chun Huang

doi:10.1063/1.3279131

Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

Li Wei Feng, Chun-Yen Chang, Chun Hao Tu, Pai-Syuan Wang, Yao Feng Chang, Chen Min Chen, Hui Chun Huang

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We investigated the physical and electrical characteristics of Ti-based nanocrystals (NCs) with composition of germanium fabricated by cosputtering titanium silicide and germanium targets for low temperature applications of nonvolatile memory. The addition of Ge significantly reduces the thermal budget necessary for Ti-based NCs formation to 500 degrees C in 2 min due to the rise of its morphological instability and agglomeration properties. Compositions characteristics were analyzed by x-ray photon-emission spectroscopy and formations of NCs were observed by transmission electron microscopy. Additionally, capacitance-voltage characteristics, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.

Original language	English
Article number	262110
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.3279131
State	Published - 28 Dec 2009

Keywords

elemental semiconductors; germanium; materials preparation; nanostructured materials; random-access storage; sputter deposition; titanium compounds; transmission electron microscopy; X-ray photoelectron spectra
LAYER-DEPOSITION SYSTEM; CHARGE STORAGE; STABILITY; DIOXIDE; GE

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title = "Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications",

abstract = "We investigated the physical and electrical characteristics of Ti-based nanocrystals (NCs) with composition of germanium fabricated by cosputtering titanium silicide and germanium targets for low temperature applications of nonvolatile memory. The addition of Ge significantly reduces the thermal budget necessary for Ti-based NCs formation to 500 degrees C in 2 min due to the rise of its morphological instability and agglomeration properties. Compositions characteristics were analyzed by x-ray photon-emission spectroscopy and formations of NCs were observed by transmission electron microscopy. Additionally, capacitance-voltage characteristics, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.",

keywords = "elemental semiconductors; germanium; materials preparation; nanostructured materials; random-access storage; sputter deposition; titanium compounds; transmission electron microscopy; X-ray photoelectron spectra, LAYER-DEPOSITION SYSTEM; CHARGE STORAGE; STABILITY; DIOXIDE; GE",

author = "Feng, {Li Wei} and Chun-Yen Chang and Tu, {Chun Hao} and Pai-Syuan Wang and Chang, {Yao Feng} and Chen, {Chen Min} and Huang, {Hui Chun}",

year = "2009",

month = dec,

day = "28",

doi = "10.1063/1.3279131",

language = "English",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

AU - Feng, Li Wei

AU - Chang, Chun-Yen

AU - Tu, Chun Hao

AU - Wang, Pai-Syuan

AU - Chang, Yao Feng

AU - Chen, Chen Min

AU - Huang, Hui Chun

PY - 2009/12/28

Y1 - 2009/12/28

N2 - We investigated the physical and electrical characteristics of Ti-based nanocrystals (NCs) with composition of germanium fabricated by cosputtering titanium silicide and germanium targets for low temperature applications of nonvolatile memory. The addition of Ge significantly reduces the thermal budget necessary for Ti-based NCs formation to 500 degrees C in 2 min due to the rise of its morphological instability and agglomeration properties. Compositions characteristics were analyzed by x-ray photon-emission spectroscopy and formations of NCs were observed by transmission electron microscopy. Additionally, capacitance-voltage characteristics, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.

AB - We investigated the physical and electrical characteristics of Ti-based nanocrystals (NCs) with composition of germanium fabricated by cosputtering titanium silicide and germanium targets for low temperature applications of nonvolatile memory. The addition of Ge significantly reduces the thermal budget necessary for Ti-based NCs formation to 500 degrees C in 2 min due to the rise of its morphological instability and agglomeration properties. Compositions characteristics were analyzed by x-ray photon-emission spectroscopy and formations of NCs were observed by transmission electron microscopy. Additionally, capacitance-voltage characteristics, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.

KW - elemental semiconductors; germanium; materials preparation; nanostructured materials; random-access storage; sputter deposition; titanium compounds; transmission electron microscopy; X-ray photoelectron spectra

KW - LAYER-DEPOSITION SYSTEM; CHARGE STORAGE; STABILITY; DIOXIDE; GE

U2 - 10.1063/1.3279131

DO - 10.1063/1.3279131

M3 - Article

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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