Role of cladding layer thicknesses on strained-layer InGaAs/GaAs single and multiple quantum well lasers

D. C. Liu*, C. P. Lee, Chia-Ming Tsai, T. F. Lei, J. S. Tsang, W. H. Chiang, Y. K. Tu

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

The influences of cladding layer thicknesses on the performance of strained-layer InGaAs/GaAs graded-index separated confinement heterostructure quantum well lasers have been studied. The waveguiding property of the laser structure was analyzed using the transfer matrix method. In this work, experimental results and the calculated results showed that threshold current densities and external quantum efficiencies both were crucially dependent on the thicknesses of cladding layer for both single and multiple quantum well lasers. The minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal total loss for both single and multiple quantum well devices were determined experimentally and theoretically.

Original languageEnglish
Pages (from-to)8027-8034
Number of pages8
JournalJournal of Applied Physics
Volume73
Issue number12
DOIs
StatePublished - 1 Dec 1993

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