Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

Dayanand Kumar, Rakesh Aluguri, Umesh Chand, Tseung-Yuen Tseng

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Abstract

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

Original languageEnglish
Article number04FE16
JournalJapanese Journal of Applied Physics
Volume57
Issue number4
DOIs
StatePublished - 1 Apr 2018

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