Robust unipolar resistive switching of Co nano-dots embedded ZrO 2 thin film memories and their switching mechanism

Ming Chi Wu; Tsung Han Wu; Tseung-Yuen Tseng

doi:10.1063/1.3674322

Robust unipolar resistive switching of Co nano-dots embedded ZrO ₂ thin film memories and their switching mechanism

Ming Chi Wu, Tsung Han Wu, Tseung-Yuen Tseng^*

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The preparation and electrical properties of Ti/Co Embedded (Co-E) ZrO ₂/Pt resistive switching memories are investigated. The Co nano-dots are formed in ZrO ₂ thin film after the memory device is annealed at 600 °C in N ₂ ambient for 60 s without any chemical reaction between Co and ZrO ₂, which is confirmed from the transmission electron microscopy, energy dispersive X-ray analyzer, and X-ray photoelectron spectroscopy observations. The devices exhibit low forming voltage of -1.5∼-2.8 V and robust negative bias unipolar resistive switching behaviors with small negative set voltage of -1.1∼-1.6 V. A physical model based on a filament mechanism is employed to explain the switching behaviors. It has a high potential for ultra high density nonvolatile memory applications.

Original language	English
Article number	014505
Journal	Journal of Applied Physics
Volume	111
Issue number	1
DOIs	https://doi.org/10.1063/1.3674322
State	Published - 1 Jan 2012

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title = "Robust unipolar resistive switching of Co nano-dots embedded ZrO 2 thin film memories and their switching mechanism",

abstract = "The preparation and electrical properties of Ti/Co Embedded (Co-E) ZrO 2/Pt resistive switching memories are investigated. The Co nano-dots are formed in ZrO 2 thin film after the memory device is annealed at 600 °C in N 2 ambient for 60 s without any chemical reaction between Co and ZrO 2, which is confirmed from the transmission electron microscopy, energy dispersive X-ray analyzer, and X-ray photoelectron spectroscopy observations. The devices exhibit low forming voltage of -1.5∼-2.8 V and robust negative bias unipolar resistive switching behaviors with small negative set voltage of -1.1∼-1.6 V. A physical model based on a filament mechanism is employed to explain the switching behaviors. It has a high potential for ultra high density nonvolatile memory applications.",

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AB - The preparation and electrical properties of Ti/Co Embedded (Co-E) ZrO 2/Pt resistive switching memories are investigated. The Co nano-dots are formed in ZrO 2 thin film after the memory device is annealed at 600 °C in N 2 ambient for 60 s without any chemical reaction between Co and ZrO 2, which is confirmed from the transmission electron microscopy, energy dispersive X-ray analyzer, and X-ray photoelectron spectroscopy observations. The devices exhibit low forming voltage of -1.5∼-2.8 V and robust negative bias unipolar resistive switching behaviors with small negative set voltage of -1.1∼-1.6 V. A physical model based on a filament mechanism is employed to explain the switching behaviors. It has a high potential for ultra high density nonvolatile memory applications.

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