Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment

Tung Ming Pan, Tan Fu Lei, Tien-Sheng Chao

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

In this paper, a method to grow robust ultrathin (EOT = 28 angstroms) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH3 with additional N2O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.

Original languageEnglish
Pages (from-to)378-380
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number8
DOIs
StatePublished - 1 Aug 2000

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