Robust terahertz polarizers with high transmittance at selected frequencies through Si wafer bonding technologies

Ting Yang Yu, Nai Chen Chi, Hsin Cheng Tsai, Shiang Yu Wang, Chih-Wei Luo, Kuan-Neng Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Terahertz (THz) polarizers with robust structure and high transmittance are demonstrated using 3D-integrated circuit (IC) technologies. A Cu wire-grid polarizer is sealed and well protected by Si-bonded wafers through a low-temperature eutectic bonding method. Deep reactive-ion etching is used to fabricate the anti-reflection (AR) layers on outward surfaces of bonded wafers. The extinction ratio and transmittance of polarizers are between 20 dB and 33 dB, and 13 dB and 27 dB for 10 μm and 20 μm pitch wire-grids, respectively, and 100% at central frequency, depending on frequency and AR layer thickness. The process of polarizer fabrication is simple from mature semiconductor manufacturing techniques that lead to high yield, low cost, and potential for THz applications.

Original languageEnglish
Pages (from-to)4917-4920
Number of pages4
JournalOptics Letters
Volume42
Issue number23
DOIs
StatePublished - 1 Dec 2017

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